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| TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* @ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation PT Top; Tstg Symbol RJC W W 0 C Unit C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C 0 2N6689, 2N6690 TO-61* * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 2N6675, 2N6690 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 0.1 0.1 Vdc ICEX mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc Symbol IEBO 2N6674, 2N6689 2N6675, 2N6690 ICBO Min. Max. 2.0 1.0 1.0 Unit mAdc mAdc ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 10 Adc; VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc IC = 15 Adc; IB = 5 Adc Base-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc hFE 15 8 40 20 1.0 5.0 1.5 Vdc Vdc VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe Cobo t 3.0 150 10 500 0.1 0.6 2.5 0.5 0.5 pF s s s s s SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cross-Over Time d r t s t f t c t See Figure 3 of MIL-PRF-19500/537 SAFE OPERATING AREA DC Tests (continuous dc) TC = +250C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537) Test 1 VCE = 11.7 Vdc, IC = 15 Adc All Types Test 2 VCE = 30 Vdc, IC = 5.9 Adc 2N6674, 2N6675 Test 3 VCE = 100 Vdc, IC = 0.25 Adc All Types Test 4 VCE = 25 Vdc, IC = 7.0 Adc 2N6689, 2N6690 Test 5 VCE = 300 Vdc, IC = 20 mAdc 2N6674, 2N6689 VCE = 400 Vdc, IC = 10 mAdc 2N6675, 2N6690 Clamped Switching TA = 250C; VCC = 15 Vdc; Load condition B; RBB1 = 5 ; RBB2 = 1.5 ; VBB2 = 5 Vdc; L = 50 H; R of inductor = .05; RL = R of inductor. (See Figure 6 of MIL-PRF-19500/537) Clamp Voltage = 350; IC = 10 Adc 2N6674, 2N6689 Clamp Voltage = 450; IC = 10 Adc 2N6675, 2N6690 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 This datasheet has been download from: www..com Datasheets for electronics components. |
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